Finazzi L., Giani R., Concepcion O., Buca D., Reboud V., Isella G., Tosi A., Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 µm, (2024) IEEE Journal of Selected Topics in Quantum Electronics, pp. 1-9, DOI: 10.1109/JSTQE.2024.3439495
Two GeSn APD designs (with 15% Sn) for mid-IR detection up to 3.3 μm were proposed, targeting applications like methane sensing and olive oil authenticity analysis.
One design uses germanium as both the multiplication and SRB layer, offering a more compact and efficient structure by minimizing the space charge region and reducing heterojunctions.
The study includes electro-optical simulations to assess device performance and features the design of an integrated all-dielectric metalens on the back-side, enhancing photon collection efficiency and signal-to-noise ratio.
