Pubication on Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Photodiodes by Layer Transfer

Cardoux C., Kroemer E., Casiez L., Frauenrath M., Pauc N., Calvo V., Assali S., Hartmann J.M., Coudurier N., Rodriguez P., Chrétien J., Widiez J., Gravrand O., Chelnokov A., Reboud V., Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Photodiodes by Layer Transfer, (2024) IEEE International Conference on Group IV Photonics GFP

Direct bandgap Ge₀.₈₆Sn₀.₁₄ photodiodes were successfully fabricated on Si substrates using layer transfer.

The layer transfer process did not degrade the noise performance of the photodiode stacks, maintaining their initial quality.

The integration of metallic mirrors underneath the photodiodes increased the responsivity by a factor of 2.9 at 300 K and 2.5 µm.