Scientific Publications, Communications and delivrables of the LastStep Project
Scientific Publications
Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications
Omar Concepción, ,Nicolaj B. Søgaard, Jin-Hee Bae, Yuji Yamamoto, Andreas T. Tiedemann, Zoran Ikonic, Giovanni Capellini, Qing-Tai Zhao, Detlev Grützmacher, Dan Buca, ACS Appl. Electron. Mater., 5, 4, 2268–2275, 2023. DOI: 10.1021/acsaelm.3c00112
Innovative Annealing Technology for Thermally Stable Ni(GeSn) Alloys,
A. Quintero, P. A. Alba, J. -M. Hartmann, P. Gergaud, V. Reboud and P. Rodriguez, 21st International Workshop on Junction Technology (IWJT), Kyoto, Japan, pp. 1-4, 2024. DOI: 10.23919/IWJT59028.2023.10175097.
Advances in GeSn alloys for MIR applications,
V. Reboud, O. Concepción, W. Du, M. El Kurdi, J.M. Hartmann, Z. Ikonic, S. Assali, N. Pauc, V. Calvo, C. Cardoux, E. Kroemer, N. Coudurier, P. Rodriguez, S.-Q. Yu, D. Buca, A. Chelnokov, Photonics and Nanostructures - Fundamentals and Applications, 58, art. no. 101233, 2024. DOI: 10.1016/j.photonics.2024.101233
Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 µm,
L. Finazzi, R. Giani, O. Concepcion, D. Buca, V. Reboud, G. Isella, A. Tosi, IEEE Journal of Selected Topics in Quantum Electronics, pp. 1-9, 2024. DOI: 10.1109/JSTQE.2024.3439495
Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry,
J.M. Hartmann , T. Marion, Materials Science in Semiconductor Processing, 169, art. no. 107893, 2024. DOI: 10.1016/j.mssp.2023.107893
Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys,
A. Quintero, P.A. Alba, J.-M., Hartmann, D. Cooper, P. Gergaud, V. Reboud, P. Rodriguez, IEEE Journal of the Electron Devices Society, 11, pp. 687 - 694, 2023. DOI: 10.1109/JEDS.2023.3332094
Room Temperature Lattice Thermal Conductivity of GeSn Alloys,
O. Concepción, J. Tiscareño-Ramírez, A.A. Chimienti, T. Classen, A.A. Corley-Wiciak, A. Tomadin, D. Spirito, D. Pisignano, P. Graziosi, Z. Ikonic, Q.T. Zhao , D. Grützmacher , G. Capellini, S. Roddaro, M. Virgilio, D. Buca, ACS Applied Energy Materials, 7 (10), pp. 4394 - 4401, 2024. DOI: 10.1021/acsaem.4c00275
Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Photodiodes by Layer Transfer,
C. Cardoux , E. Kroemer , L. Casiez , M. Frauenrath, N. Pauc , V. Calvo, S. Assali , J.M. Hartmann , N. Coudurier , P., Rodriguez, J. Chrétien, J. Widiez, O. Gravrand, A. Chelnokov, V. Reboud, IEEE International Conference on Group IV Photonics GFP, 2024. DOI: 10.1109/SiPhotonics60897.2024.10544244
Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs,
L. Casiez, C. Cardoux, P. Acosta Alba, N. Bernier, J. Richy, N. Pauc, V. Calvo, N. Coudurier, P. Rodriguez, O. Concepción, D. Buca, M. Frauenrath, J.M. Hartmann , A. Chelnokov, V. Reboud, Materials Science in Semiconductor Processing, 182, art. no. 108654, 2024. DOI: 10.1016/j.mssp.2024.108654A.
Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
Lukas Seidel, Teren Liu, Omar Concepción, Bahareh Marzban, Vivien Kiyek, Davide Spirito, Daniel Schwarz, Aimen Benkhelifa, Jörg Schulze, Zoran Ikonic, Jean-Michel Hartmann, Alexei Chelnokov, Jeremy Witzens, Giovanni Capellini, Michael Oehme, Detlev Grützmacher & Dan Buca, Nat Commun 15, 10502 (2024).
Dynamics of thermal-induced Sn segregation in GeSn at the nanometer scale
Segura-Ruiz J., Bonino V., Rosenthal M., Pauc N., Calvo V., Frauenrath M., Cardoux C., Hartmann J.-M., Chelnokov A., Reboud V., , (2025) Journal of Alloys and Compounds, 1020, art. no. 179435, DOI: 10.1016/j.jallcom.2025.179435
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization
Coudurier N., Quintero A., Pellerin R., Robin M., Hartmann J.-M., Reboud V., Rodriguez P., (2025) IEEE Transactions on Electron Devices, 72 (4), pp. 2065 – 2072, DOI: 10.1109/TED.2025.3542347
Toward thermally stable Ni(GeSn) contacts using pre-amorphization by implantation or nanosecond laser annealing
A. Quintero, M. Coig, F. Mazen, P. Acosta-Alba, J.-M. Hartmann, P. Gergaud, V. Reboud, Ph. Rodriguez, MRS Adv. 10, 213 (2025). https://doi.org/10.1557/s43580-024-01026-5
GeSn quantum wells as a platform for spin-resolved hole transport
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del-Vecchio, P., Concepción, O., Ikonić, Z., Gruẗzmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., Buca, D., (2025) Communications Materials, 6 (1), art. no. 216, DOI: 10.1038/s43246-025-00934-9.
An assessment of germane and tin tetrachloride for GeSn epitaxy
Hartmann, J.M., Marion, T., (2025) Journal of Crystal Growth, 667, art. no. 128280, DOI: 10.1016/j.jcrysgro.2025.128280.
Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures
Concepción, O., Devaiya, A.J., Zoellner, M.H., Schubert, M.A., Bärwolf, F., Seidel, L., Reboud, V., Tiedemann, A.T., Bae, J.-H., Tchelnokov, A., Zhao, Q.-T., Broderick, C.A., Oehme, M., Capellini, G., Gruẗzmacher, D., Buca, D., Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures (2025) Advanced Materials, 37 (37), art. no. 2506919, DOI: 10.1002/adma.202506919
Luminescence properties of GeSn laser materials: Influence of buffered substrates
Aagaard, M., Concepción, O., Buca, D., Ikonić, Z., Julsgaard, B. Luminescence properties of GeSn laser materials: Influence of buffered substrates, (2025) Journal of Applied Physics, 138 (10), art. no. 105701, DOI: 10.1063/5.0281958.
Spin Pumping in Epitaxial Ge1-xSnx Alloys
Longo, E., Concepción, O., Mantovan, R., Fanciulli, M., Myronov, M., Bonera, E., Pedrini, J., Buca, D., Pezzoli, F., (2025) Advanced Quantum Technologies, 8 (5), art. no. 2400508, DOI: 10.1002/qute.202400508.
Phase-Coherent Transport in GeSn Alloys on Si
Kaul, P., Concepción, O., Wielens, D.H., Zellekens, P., Li, C., Ikonić, Z., Ishibashi, K., Zhao, Q.-T., Brinkman, A., Gruẗzmacher, D., Buca, D., (2025) Advanced Electronic Materials, 11 (2), art. no. 2400565, DOI: 10.1002/aelm.202400565.
Direct Bandgap Ge0.846Sn0.154 Photodiodes for Gas Sensing in the Mid-Wave Infrared
Cardoux, C., Casiez, L., Kroemer, E., Frauenrath, M., Chrétien, J., Pauc, N., Calvo, V., Hartmann, J.M., Lartigue, O., Constancias, C., Barritault, P., Coudurier, N., Philippe, P., Vandeneynde, A., Grosse, P., Gravrand, O., Chelnokov, A., Reboud, V.,, (2025) IEEE Journal of Selected Topics in Quantum Electronics, 31 (1), art. no. 3801108, DOI: 10.1109/JSTQE.2024.3520704.
CW electrically pumped GeSn/SiGeSn MQW lasers
Concepción, O., Seidel, L., Liu, T., Capellini, G., Oehme, M., Gruẗzmacher, D., Buca, D., (2025) IEEE International Conference on Group IV Photonics GFP, DOI: 10.1109/SiPhotonics64386.2025.10985491
On demand control of the strain state in Ge-GeSn microbridges
Bard, A., Calvo, V., Reboud, V., Le Rhun, G., Hartmann, J.M., Pauc, N., (2025) Proceedings of SPIE - The International Society for Optical Engineering, 13371, art. no. 133710U, DOI: 10.1117/12.3045193.
Electrically Pumped GeSn Micro-Ring Lasers
T. Liu et al., IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 1: SiGeSn Infrared Photon. and Quantum Electronics, pp. 1-7, Jan.-Feb. 2025, Art no. 8100307, doi: 10.1109/JSTQE.2024.3489712.
Photonic ge-based platforms for mid-infrared applications
V. Reboud, J. M. Hartmann, S. Serna, K. Stoll, C. Monat and C. Grillet, Photoniques, Photonics integrated circuits, 50 – 57, 125, 2024, https://doi.org/10.1051/photon/20241255
Enhanced Detectivity of Ge0.854Sn0.146 Mid-Infrared Photodiodes by Layer Transfer
C. Cardoux, N. Pauc, L. Casiez, E. Kroemer, J. Chrétien, A. Bard, M. Frauenrath, V. Calvo, J.M. Hartmann, N. Coudurier, P. Rodriguez, S. Koelling, O. Moutanabbir, G. Isella, J. Widiez, O. Gravrand, A. Chelnokov, V. Reboud, ACS Photonics, 13(12), pp. 3252–3260, 2026. DOI: 10.1021/acsphotonics.5c02368
Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process
J. Chrétien, N. Bernier, P. Perreau, P. Goulain, P. Gilles, L. Avenas, L. Andreutti, J.-M. Boissel, C. Lecouvey, T. Magis, C. Cardoux, G. Enyedi, P. Gergaud, J. Richy, A. Chelnokov, V. Calvo, V. Reboud, J.-M. Hartmann, N. Pauc, J. Widiez, Applied Surface Science, 721, 165489, 2026. DOI: 10.1016/j.apsusc.2025.165489
GeSn Quantum Wells for Room-Temperature Mid-Infrared Lasing on Si and on Insulator Platforms
A. Meyer, H.-M. Reynoso-de la Cruz, O. Concepción, P. Kaul, K. Pantzas, E. Herth, Z. Ikonic, G. Capellini, D. Grützmacher, M. El Kurdi, D. Buca, Advanced Optical Materials, 14(28), e71414, 2026. DOI: 10.1002/adom.71414
Ge/GeSn Quantum Well MOSFETs for Cryogenic Applications
J. Sun, Y. Han, X. Bai, P. Kaul, Y. Junk, J. Zhang, Y.-T. Liao, Y.-C. Chang, A. Rajan, R.E. Dunin-Borkowski, D. Grützmacher, J. Knoch, D. Buca, Q.-T. Zhao, IEEE Electron Device Letters, 2026. DOI: 10.1109/LED.2026.3716584
Formation and structural characterization of amorphous GeSn thin films via solid-state Sn diffusion into hydrogenated amorphous germanium
J.M. Carmona-Sánchez, J. Tiscareño-Ramírez, V. Aca-Aca, A. Hernández-Flores, J.J. Aviles-Bravo, N.C. Ramirez, D. Buca, A. Torres Jacome, Journal of Alloys and Compounds, 1074, 189195, 2026. DOI: 10.1016/j.jallcom.2026.189195
Oxygen Plasma Interface Engineering of Ti/n-GeSn Contacts for Ultra-Low Contact Resistivity
J. Sun, Y. Han, Y. Junk, J.H. Bae, B. Klingebiel, D. Grützmacher, D. Buca, Q.-T. Zhao, ACS Applied Nano Materials, 2026. DOI: 10.1021/acsanm.6c03362
Dislocations influence the background hole densities in Ge/Si virtual substrates
H. Tetzner, A.A. Corley-Wiciak, A.J. Devaiya, O. Concepción, D. Stolarek, M.A. Schubert, Y. Yamamoto, D. Buca, G. Capellini, Applied Physics Letters, 127(25), 251901, 2025. DOI: 10.1063/5.0308836
Shedding light on epitaxial SiGeSn alloys with Raman spectroscopy: local order and thermomechanical properties
A.A. Corley-Wiciak, I. Zaitsev, O. Concepción, D. Buca, C.L. Manganelli, G. Capellini, D. Spirito, Journal of Physics: Condensed Matter, 37(49), 493002, 2025. DOI: 10.1088/1361-648X/ae1c0b
Interfacial Reactions and Electrical Properties of Co/GeSn Contacts
L. Badeau, N. Coudurier, P. Gergaud, J.-M. Hartmann, V. Reboud, P. Rodriguez, IEEE Journal of the Electron Devices Society, 13, pp. 1299–1305, 2025. DOI: 10.1109/JEDS.2025.3636591
GeSn quantum wells as a platform for spin-resolved hole transport
P. Kaul, J. Karthein, J. Buchhorn, T. Kawano, T. Usubuchi, J. Ishihara, N. Rotaru, P. Del Vecchio, O. Concepción, Z. Ikonic, D. Grützmacher, Q.-T. Zhao, O. Moutanabbir, M. Kohda, T. Schäpers, D. Buca, Communications Materials, 6, 216, 2025. DOI: 10.1038/s43246-025-00934-9
Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures
O. Concepción, A.J. Devaiya, M.H. Zoellner, M.A. Schubert, F. Bärwolf, L. Seidel, V. Reboud, A.T. Tiedemann, J.-H. Bae, A. Tchelnokov, Q.-T. Zhao, C.A. Broderick, M. Oehme, G. Capellini, D. Grützmacher, D. Buca, Advanced Materials, 37(37), 2506919, 2025. DOI: 10.1002/adma.202506919
Luminescence properties of GeSn laser materials: Influence of buffered substrates
M. Aagaard, O. Concepción, D. Buca, Z. Ikonic, B. Julsgaard, Journal of Applied Physics, 138(10), 105701, 2025. DOI: 10.1063/5.0281958
Optical and structural properties of p-doped Ge/SiGe multiple quantum wells for mid-infrared photonics
S. Calcaterra, M. Faverzani, D. Impelluso, D. Chrastina, R. Giani, L. Anzi, J.H. Bae, C. Tassi, D. Buca, P. Biagioni, G. Isella, M. Virgilio, J. Frigerio, Physical Review B, 112, 045429, 2025. DOI: 10.1103/9mm6-96nk
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices
P. Graziosi, D. Marian, A. Tomadin, S. Roddaro, O. Concepción, J. Tiscareño-Ramírez, P. Kaul, A.A. Corley-Wiciak, D. Buca, G. Capellini, M. Virgilio, ACS Applied Energy Materials, 8(13), pp. 9075–9082, 2025. DOI: 10.1021/acsaem.5c00733
An assessment of germane and tin tetrachloride for GeSn epitaxy
J.M. Hartmann, T. Marion, Journal of Crystal Growth, 667, 128280, 2025. DOI: 10.1016/j.jcrysgro.2025.128280
EXAFS sheds light on short-range ordering in Ge1-xSnx heteroepitaxial layers grown by MBE and CVD
S. Gougam, F. De Angelis, C. Meneghini, O. Concepción, D. Buca, G. Capellini, M.H. Zoellner, Physical Review Materials, 9, 064601, 2025. DOI: 10.1103/PhysRevMaterials.9.064601
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization
N. Coudurier, A. Quintero, R. Pellerin, M. Robin, J.-M. Hartmann, V. Reboud, P. Rodriguez, IEEE Transactions on Electron Devices, 72(4), pp. 2065–2072, 2025. DOI: 10.1109/TED.2025.3542347
Spin Pumping in Epitaxial Ge1-xSnx Alloys
E. Longo, O. Concepción, R. Mantovan, M. Fanciulli, M. Myronov, E. Bonera, J. Pedrini, D. Buca, F. Pezzoli, Advanced Quantum Technologies, 8(5), 2400508, 2025. DOI: 10.1002/qute.202400508
Toward thermally stable Ni(GeSn) contacts using pre-amorphization by implantation or nanosecond laser annealing
A. Quintero, M. Coig, F. Mazen, P. Acosta-Alba, J.-M. Hartmann, P. Gergaud, V. Reboud, P. Rodriguez, MRS Advances, 10(2), pp. 213–219, 2025. DOI: 10.1557/s43580-024-01026-5
Phase-Coherent Transport in GeSn Alloys on Si
P. Kaul, O. Concepción, D.H. Wielens, P. Zellekens, C. Li, Z. Ikonic, K. Ishibashi, Q.-T. Zhao, A. Brinkman, D. Grützmacher, D. Buca, Advanced Electronic Materials, 11(2), 2400565, 2025. DOI: 10.1002/aelm.202400565
Enhancing Device Performance with High Electron Mobility GeSn Materials
Y. Junk, O. Concepción, M. Frauenrath, J. Sun, J.H. Bae, F. Bärwolf, A. Mai, J.-M. Hartmann, D. Grützmacher, D. Buca, Q.-T. Zhao, Advanced Electronic Materials, 11, 2400561, 2025. DOI: 10.1002/aelm.202400561
Direct Bandgap Ge0.846Sn0.154 Photodiodes for Gas Sensing in the Mid-Wave Infrared
C. Cardoux, L. Casiez, E. Kroemer, M. Frauenrath, J. Chrétien, N. Pauc, V. Calvo, J.-M. Hartmann, O. Lartigue, C. Constancias, P. Barritault, N. Coudurier, P. Rodriguez, A. Vandeneynde, P. Grosse, O. Gravrand, A. Chelnokov, V. Reboud, IEEE Journal of Selected Topics in Quantum Electronics, 31(1), 3801108, 2025. DOI: 10.1109/JSTQE.2024.3520704
Presentations and Prices
PGI-Forum
Presentations of three posters with acknowledgment to LastStep.
Press release : The Last Missing Piece of Silicon Photonics
International research team presents first electrically pumped continuous-wave semiconductor laser suitable for seamless silicon integration
Best Oral Presentation Award : Improving the Thermal Stability of Ni(GeSn) Alloys Using Pre-Amorphization by Implantation and Nanosecond Laser Annealing
A. Quintero, M. Coig, F. Mazen, P. Acosta Alba, J.-M. Hartmann, P. Gergaud, V. Reboud, Ph. Rodriguez, 24th International Conference on Ion Implantation Technology 2024 (IIT 2024), Sept. 20-26, 2024 (Toyama, Japan).
Press release : Harnessing GeSn Semiconductors for Tomorrow’s Quantum World
An international team of researchers from Forschungszentrum Jülich (Germany), Tohoku University (Japan), and École Polytechnique de Montréal (Canada) has made a significant discovery in semiconductor science and technology by revealing the remarkable spin-related material properties of the Germanium–Tin (GeSn) semiconductors.
Press release : New Material Paves the Way to On-Chip Energy Harvesting
Researchers from Germany, Italy, and the UK have achieved a major advance in the development of materials suitable for on-chip energy harvesting. By composing an alloy made of silicon, germanium and tin, they were able to create a thermoelectric material, promising to transform the waste heat of computer processors back into electricity. With all elements coming from the 4th main group of the periodic table, these new semiconductor alloy can be easily integrated into the CMOS process of chip production. The research findings made it onto the cover of the renowned scientific journal ACS Applied Energy Materials.
Press release : New Semiconductor for Future Computer Chips
Researchers at Forschungszentrum Jülich and the Leibniz Institute for Innovative Microelectronics (IHP) have developed a material that has never existed before: a stable alloy of carbon, silicon, germanium, and tin. The new compound, abbreviated as CSiGeSn, opens up exciting possibilities for applications at the interface of electronics, photonics, and quantum technology.
Best Oral Presentation Award : Improving the Thermal Stability of Ni(GeSn) Alloys Using Pre-Amorphization by Implantation and Nanosecond Laser Annealing
Improving the Thermal Stability of Ni(GeSn) Alloys Using Pre-Amorphization by Implantation and Nanosecond Laser Annealing, A. Quintero, M. Coig, F. Mazen, P. Acosta Alba, J.-M. Hartmann, P. Gergaud, V. Reboud, Ph. Rodriguez, 24th International Conference on Ion Implantation Technology 2024 (IIT 2024), Sept. 20-26, 2024 (Toyama, Japan).
Best poster Award at GADEST 2026
Defect characterization in monolithic integrated Ge-on-Si layers grown by Low Energy Plasma-Enhanced Chemical Vapour Deposition, Afonso Oliveira et al.
Communications
Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and performances
Moustafa El Kurdi, Andjelika Bjelajac, G. Patriarche, Nicolas Pauc, Vincent Calvo, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Dan Buca, ISTDM ICSI 2023
GeSn/SiGeSn micro-rings laser diodes on Si
Teren Liu, Lukas Seidel, Bahareh Marzban, Jeremy Witzens, Giovanni Capellini, Michael Oehme, Detlev Grützmacher and Dan Buca, ISTDM ICSI 2023.
Thermoelectric properties of GeSn alloys
D. Buca, ISTDM ICSI 2023.
Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
L. Casiez, C. Cardoux, M. Frauenrath, P. Acosta Alba, N. Bernier, N. Pauc, V. Calvo, N. Coudurier, P. Rodriguez, O. Concepción Díaz, D. Buca, J.M. Hartmann, A. Chelnokov,V. Reboud, ISTDM ICSI 2023.
Isothermal heteroepitaxy of Ge1-xSnx structures for electronic and photonic applications
Omar Concepción, Nicolaj B. Søgaard, Jin-Hee Bae, Andreas T. Tiedemann, Yuji Yamamoto, Zoran Ikonic, Giovanni Capellini, Qing T. Zhao, Dan Buca, and Detlev Grützmacher, ISTDM ICSI 2023.
Temperature dependence of Raman scattering in Ge and GeSn layers
Diana Ryzhak, Agnieszka Anna Corley-Wiciak, Marvin Hartwig Zoellner, Omar Concepción, Costanza Lucia Manganelli, Oliver Skibitzki1, Dan Buca2, Giovanni Capellini, and Davide Spirito, ISTDM ICSI 2023.
Polarized-resolved Raman scattering of epitaxially grown GeSn layers with various Sn content
Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción, Marvin Hartwig Zoellner, Detlev Grützmacher, Dan Buca, Tianshu Li, Giovanni Capellini, Davide Spirito, ISTDM ICSI 2023.
Group-IV Ge1-xSnx alloys: growth challenge and isothermal heteroepitaxy for electronic, photonic, and energy harvesting applications
Omar Concepción, Nicolaj B. Søgaard, P. Kaul, Jin-Hee Bae, Yuji Yamamoto, Andreas T. Tiedemann, Zoran Ikonic, Giovanni Capellini, Qing T. Zhao, Dan Buca, and Detlev Grützmacher
Thermally Stable Ohmic Contacts on GeSn Layers
. Coudurier, A. Quintero, R. Pellerin, J.-M. Hartmann, V. Reboud, Ph. Rodriguez, 31st Materials for Advanced Metallization Conference (MAM-2024), March 18-21, 2024 (Milano, Italy).
Improving the Thermal Stability of Ni(GeSn) Alloys Using Pre-Amorphization by Implantation and Nanosecond Laser Annealing
A. Quintero, M. Coig, F. Mazen, P. Acosta Alba, J.-M. Hartmann, P. Gergaud, V. Reboud, Ph. Rodriguez, 24th International Conference on Ion Implantation Technology 2024 (IIT 2024), Sept. 20-26, 2024 (Toyama, Japan).
GeSnOI platform for future development of extended-NIR silicon photonics
M. El Kurdi, SPIE Photonics Europe, Integrated Photonics Platform III, session 6: integrated light amplification and emission, Strasbourg, France, 7-11 Avril 2024
Germanium-Tin quantum well mid-IR lasing up to room temperature
M. El Kurdi, International Material Reseach Congress IMRC, Symposium G5 Recent Trends in Functional Semiconducting Materials, Cancun, Mexico, August 18-23 (2024)
Laser infrarouge de la filière silicium à base d’alliages GeSn
M. El Kurdi, JNMO Journées Nano-Microélectronique, Sète, France, 1-4 Octobre 2024
Strained GeSn-on-insolator quantum well laser for the extended-NIR silicon photonics
Antoine Meyer, Maria-Alejandra Mendez, Antonin Macquart, Omar Concepción, Dan Buca, Moustafa El-Kurdi, SPIE Photonics Europe, Integrated Photonics Platform III, session 1: quantum photonics, Strasbourg, France, 7-11 Avril 2024
New design of electrically pumped GeSnOI laser integrated on a Si-photonics platform
Maria Alejandra MENDEZ RINCON, Omar Concepción, Dan Buca, Moustafa El-Kurdi, SPIE Photonics Europe, Integrated Photonics Platform III, session 6: integrated light amplification and emission, Strasbourg, France, 7-11 Avril 2024
Strained GeSn-on-insulator quantum well laser for the extended-NIR silicon photonics
Antoine Meyer, Maria-Alejandra Mendez, Antonin Macquart, Omar Concepción, Dan Buca, Moustafa El-Kurdi, SPIE Photonics West, San Francisco,Silicon Photonics XXI, California US, January 2025
Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Photodiodes by Layer Transfer
C. Cardoux, E. Kroemer, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, S. Assali, J.M. Hartmann, N. Coudurier, P. Rodriguez, J. Chrétien, J. Widiez, O. Gravrand, A. Chelnokov, V. Reboud, EEE Silicon Photonics Conference, 2024.
An assessment of the GeH4+SnCl4 chemistry for the epitaxy of thin and thick GeSn layers,
J.M. Hartmann, T. Marion, C. Cardoux, P. Gergaud, N. Bernier, N. Pauc and V. Reboud, emrs, 2024.
(Si)GeSn mid-IR light emitting and detecting optoelectronic devices
A. Chelnokov, C. Cardoux, E. Kroemer, N. Coudurier, P. Rodriguez, N. Pauc, V. Calvo, O. Gravrand, J.M. Hartmann, V. Reboud, IEEE Summer Topicals Meeting Series, 2024.
Ultimate Group-IV alloys Epitaxy for Device Applications
O. Concepción, CMD-General Conference of the Condensed Matter Division, September, 02-06, 2024, Braga, Portugal.
All-group-iv epitaxy by chemical vapor deposition
O. Concepción, 32nd International Materials Research Congress (IMRC2024), August. 18-23, 2024, Cancun, Mexico.
Toward electrically pumped GeSn lasers
D. Buca (O. Concepción in his name), 32nd International Materials Research Congress (IMRC2024), August. 18-23, 2024, Cancun, Mexico.
Electrically pumped SiGeSn/GeSn multiple quantum well lasers,
D. Buca, T. Liu, L. Seidel, O. Concepción, A. Chelnokov, G. Capellini, M. Oehme, and D. Grützmacher, IEEE Summer Topicals Meeting Series, July. 15-17, 2024, Bridgetown, Barbados.
Electrically pumped SiGeSn/GeSn multiple quantum well lasers
T. Liu, L. Seidel, O. Concepción, J. Witzens, G. Capellini, M. Oehme, D. Grützmacher and D. Buca, Pacific Rim Conference on Lasers and Electro-Optics, August. 04-09, 2024, Songdo Convensia, Incheon, Korea.
Epitaxy studies of C-Si-Ge-Sn Layer for photonics applications
O. Concepción, M. H. Zoellner, G. Capellini, Q. T. Zhao, D. Grützmacher, and D. Buca, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, Dec. 14-15, 2023, Sendai, Japan.
Si-Ge-Sn alloys grown by CVD for applications in optics, electronics, and thermoelectrics
O. Concepción, P. Kaul, O. Krause, J-H. Bae, T. Brazda, A. T. Tiedemann, Q. Zhao, D. Grützmacher and D. Buca, 2023 MRS Spring Meeting & Exhibit, April 10-14, 2023, San Francisco, US.
Room Temperature Lattice Thermal Conductivity of GeSn Alloys
J. Tiscareño-Ramirez, T. Classen, O. Concepción, A. A. Corley-Wiciak1, D. Spirito, Z. Ikonic, G. Capellini, S. Roddaro, M. Virgilio, D. Grützmacher, R. Spatschek, D. Buca, Peter Grünberg Institute (PGI) Forum, February 14th, 2024, Juelich, Germany.
Phase-coherent transport in Sn-rich GeSn towards high mobility electronics and spintronics
, P. Kaul, O. Concepción, A. Devaiya, C. Li, D. H. Wielens, Q-T. Zhao, D. Grützmacher, A. Brinkman, D. Buca, Peter Grünberg Institute (PGI) Forum, February 14th, 2024, Juelich, Germany.
SiGeSn lasers for CMOS integrated Si-photonics
T. Liu, L. Seidel ,O. Concepción, M. Oehme, G.Capellini, J. Witzens, D. Grützmacher, D. Buca, Peter Grünberg Institute (PGI) Forum, February 14th, 2024, Juelich, Germany.
All Group-IV Epitaxy by Chemical Vapor Deposition
O. Concepción, Q.-T. Zhao, D. Grützmacher, and D. Buca, Peter Grünberg Institute (PGI) Forum, February 14th, 2024, Juelich, Germany.
Toward fundamental breakthrough in materials science: C(Si)GeSn -topological quantum states
O. Concepción, M. Zoellner, A. Devaiya, A. T. Tiedemann, J.-H. Bae, Q.-T. Zhao, D. Grützmacher, G. Capellini, and Dan Buca, Peter Grünberg Institute (PGI) Day, September 10th, 2024, Juelich, Germany.
Thermal conductivity of GeSn alloys: a CMOS candidate for energy harvesting applications
Jhonny Tiscareño Ramirez; Salvador Gallardo Hernandez; Oliver Krause; Omar Concepción; Detlev Grützmacher; Dan Buca, LAEDC 2023, 3-5 July, Puebla, Mexico.
Thermoelectric properties of CMOS-compatible GeSn binary alloys at room temperature
Jhonny Tiscareño-Ramírez, Omar Concepción, Thomas Classen, Zoran Ikonic, Francisco Rivadulla, Detlev Grützmacher, and Dan Buca, SSDM 2024, September 1-4, Himeji, Japan.
All Group-IV Epitaxy by Chemical Vapour Deposition
, A.devaiya, O. Concepcion, Q.T. Zhao, D. Grützmacher, D. Buca, FAME-II 2024, July 8-9, Eindhoven, The Netherlands.
Magneto-transport characterization of GeSn for spintronics applications
Prateek Kaul, Omar Concepción, Daan Wielens, Patrick Zellekens, Chuan Li, Zoran Ikonic, Koji Ishibashi, Qing-Tai Zhao, Detlev Grützmacher, Alexander Brinkman, and Dan Buca, SSDM 2024 - International Conference on Solid State Devices and Materials September 1st - 4th, ARCREA Himeji, Hyogo, Japan
GeSn/SiGeSn multi-quantum well heterostructures for mid-infrared lasers
W. Belaid, O. Concepcion, D. Buca, R. W. Kelsall, Z. Ikonic, Semiconductor and Integrated Opto-Electronics (SIOE) Conf., 23-25th April 2025, Cardiff, UK, abstract S25-14.
Opportunities for GeSn in Spintronics and Quantum Computing
P. Kaul, D. Grützmacher, Q.-T. Zhao, K. Hashimoto, M. Kohda, T. Schäpers, D. Buca, International Workshop on Semiconductor Material and Process Technology for Future Nanoelectronic Devices, ASPIRE Workshop, Kyushu University, 2026.
Characterization of gate-defined quantum devices based on GeSn quantum wells
P. Kaul, J. Zhang, J. Sun, D. Grützmacher, Q.-T. Zhao, M. Kohda, K. Hashimoto, T. Schäpers, D. Buca, International Conference on Solid State Devices and Materials (SSDM), 2026.
Seebeck Coefficient Measurements of GeSn-Based Group IV Alloys
J. Tiscareño-Ramírez, M. Carmona-Sánchez, R. Ramos, V. Leborán, F. Rivadulla, P. Graziosi, M. Kurosawa, O. Nakatsuka, D. Grützmacher, D. Buca, International Conference on Solid State Devices and Materials (SSDM), 2026.
Beyond GeSn: Stabilizing Carbon in Group-IV Diamond Alloys
A.J. Devaiya, S. Chen, B. Klingebiel, O. Concepción, T. Fischer, S. Koelling, M.H. Zoellner, J.-H. Bae, Y. Imai, G. Capellini, O. Moutanabbir, T. Li, K. Makihara, D. Grützmacher, S. Mathur, D. Buca, International Conference on Solid State Devices and Materials (SSDM), 2026.
Probe into GeSn quantum wells as a novel platform for hole spin qubits
P. Kaul, J. Karthein, J. Buchhorn, T. Kawano, T. Usubuchi, J. Ishihara, N. Rotaru, D. Grützmacher, Q.-T. Zhao, O. Moutanabbir, M. Kohda, T. Schäpers, D. Buca, SpinQubit7, 7th International Conference on Spin-Based Quantum Information Processing, 2026.
Spatio-temporal characterization of nanoscale thermal dynamics in electrically pumped (Si)GeSn microdisk lasers
A. Corley-Wiciak, C. Corley-Wiciak, L. Seidel, et al., Proc. SPIE PC14090, Semiconductor Lasers and Laser Dynamics XII, PC140900E, 2026. DOI: 10.1117/12.3099004
CW electrically pumped GeSn/SiGeSn MQW lasers
O. Concepción, L. Seidel, T. Liu, G. Capellini, M. Oehme, D. Grützmacher, D. Buca, 2025 IEEE Silicon Photonics Conference (SiPhotonics / Group IV Photonics), London, UK, pp. 1–2, 2025. DOI: 10.1109/SiPhotonics64386.2025.10985491
On demand control of the strain state in Ge-GeSn microbridges
A. Bard, V. Calvo, V. Reboud, G. Le Rhun, J.M. Hartmann, N. Pauc, Proc. SPIE 13371, Silicon Photonics XX, 133710U, 2025. DOI: 10.1117/12.3045193
New design of electrically pumped GeSn-On-Insulator laser integrated on a Si-photonics platform
M.-A. Mendez Rincon, H. Reynoso, O. Concepción, et al., Proc. SPIE PC13371, Silicon Photonics XX, PC133710I, 2025. DOI: 10.1117/12.3042799
Strained GeSn-on-insulator quantum well laser for the extended-NIR silicon photonics
A. Meyer, M.-A. Mendez Rincon, O. Concepción, et al., Proc. SPIE PC13371, Silicon Photonics XX, PC133710F, 2025. DOI: 10.1117/12.3041290
Characterization of a two-dimensional hole gas in a GeSn quantum well system
P. Kaul, J. Karthein, J. Buchhorn, T. Kawano, T. Usubuchi, J. Ishihara, N. Rotaru, P. Del Vecchio, O. Concepción, D. Grützmacher, Q.-T. Zhao, O. Moutanabbir, M. Kohda, T. Schäpers, D. Buca, International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM), 2025.
Ge Epitaxy on Si(001) using Halide-based Chemical Vapor Deposition
A.J. Devaiya, O. Concepción, C. Porret, D. McDermott, A.T. Tiedemann, J. Cho, K. Dessin, S. Mathur, D. Grützmacher, D. Buca, R. Loo, International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM), 2025.
Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells
P. Kaul, J. Karthein, J. Buchhorn, T. Kawano, T. Usubuchi, J. Ishihara, N. Rotaru, D. Grützmacher, Q.-T. Zhao, O. Moutanabbir, M. Kohda, T. Schäpers, D. Buca, ASPIRE Workshop on Quantum and Topological Materials, 2025.
Advanced CSiGeSn heterostructures for photonic applications
A.J. Devaiya, D. Buca, G. Capellini, J.H. Bae, T. Liu, D. Grützmacher, M. Oehme, O. Concepción, A.T. Tiedemann, L. Seidel, S. Mathur, 11th NRW Nano Conference, 2025.
CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials
A.J. Devaiya, O. Concepción, T. Fischer, A. Tiedemann, G. Capellini, S. Mathur, D. Grützmacher, D. Buca, 16th International Workshop on New Group IV Semiconductor Nanoelectronics, 2025.
GeSn binary alloys for Room Temperature CMOS compatible energy harvesting applications
J. Tiscareño-Ramírez, M. Carmona-Sánchez, R.E. Ramos Amigo, F. Rivadulla, G. Capellini, O. Concepción, D. Buca, Z. Ikonic, D. Grützmacher, FISMAT 2025.
Amorphous-GeSn alloys development for energy harvesting at room temperature
M. Carmona-Sánchez, J. Tiscareño-Ramírez, D. Buca, A. Torres-Jacome, FISMAT 2025.
Magneto-transport characterization of GeSn for spintronics applications
P. Kaul, O. Concepción, D. Wielens, P. Zellekens, C. Li, Z. Ikonic, K. Ishibashi, Q.-T. Zhao, D. Grützmacher, A. Brinkman, D. Buca, International Conference on Solid State Devices and Materials (SSDM), 2024. DOI: 10.7567/SSDM.2024.J-3-03
Combination of layer deposition and pulsed UV laser annealing for thin GeSn:Sb layers hyperdoping
R. Daubriac, D. Fontana, E. Di Russo, G. Spataro, F. Sgarbossa, G. Maggioni, D. De Salvador, G. Isella, J. Frigerio, E. Napolitani, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Material and Design Trade-offs in GeSn-Based MQW Lasers on Silicon
D. Buca, D. Grützmacher, G. Capellini, M. Oehme, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Room-Temperature Optical Gain Analysis in Biaxially Strained Bulk GeSn for Mid-Infrared Silicon Photonics
W. Belaid, Z. Ikonić, V. Reboud, R. W. Kelsall, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Germanium tin on insulator, a suitable platform for electrically driven Mid-IR emitters and detectors
M. El Kurdi, A. Macquart, J.-M. Hartmann, L. Bonin, N. Pauc, V. Reboud, P. Goulain, A. Chelnokov, D. Buca, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Influence of Electrode Geometry and Thermal Annealing on the Electroluminescence of GeSn LEDs
P. Goulain, L. Bonin, C. Cardoux, N. Pauc, J. Chrétien, M. Frauenrath, V. Calvo, J.-M. Hartmann, N. Coudurier, P. Rodriguez, O. Gravrand, V. Reboud, A. Chelnokov, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
High Sn content GeSn-based Avalanche PhotoDiode for Medium InfraRed detectio n
L. Finazzi, A. Tosi, A. Chelnokov, C. Zucchetti, D. Buca, F. Telesca, F. Scali, G. Isella, J.-M. Hartmann, N. Pauc, O. Concepción, V. Reboud, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Operando study of device heating using full-field x-ray diffraction microscopy
J. Chrétien, A. Chelnokov, C. Lecouvey, C. Cardoux, G. Enyedi, J.-M. Boissel, J.-M. Hartmann, J. Widiez, J. Richy, L. Andreutti, L. Avenas, N. Bernier, N. Pauc, P. Gergaud, P. Goulain, P. Perreau, P. Gilles, T. Magis, V. Calvo, V. Reboud, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Strain-controlled directness and confinement margins in CGeSn/(Si)GeSn MQW emitters on (001) Ge/Si
W. Belaid, R. W. Kelsall, Z. Ikonić, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.
Monolithic GeSn Photodetectors Integrated on Silicon for Mid-Infrared Applications
V. Reboud, P. Goulain, L. Bonin, C. Cardoux, J. Chrétien, M. Frauenrath, V. Calvo, J.-M. Hartmann, N. Coudurier, P. Rodriguez, S. Koelling, O. Moutanabbir, G. Isella, J. Widiez, O. Gravrand, A. Tchelnokov, Gettering and Defect Engineering in Semiconductor Technology (GADEST), 2026.