Publication on isothermal GeSn Heteroepitaxy 

Publication 

 

A simple epitaxial growth approach that allows isothermal epitaxy of Ge1−xSnx semiconductors heterostructures has been presented and published in ACS Appl. Electron. Mater.

Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications
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