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Publication on isothermal GeSn Heteroepitaxy 



A simple epitaxial growth approach that allows isothermal epitaxy of Ge1−xSnx semiconductors heterostructures has been presented and published in ACS Appl. Electron. Mater.

Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications
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Investigation of the use of UV-nanosecond laser annealing (UV-NLA) to obtain more stable Ni(GeSn) alloys than with conventional rapid thermal annealing (RTA) : https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10175097&tag=1