Publication on Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Seidel L., Liu T., Concepción O., Marzban B., Kiyek V., Spirito D., Schwarz D., Benkhelifa A., Schulze J., Ikonic Z., Hartmann J.-M., Chelnokov A., Witzens J., Capellini G., Oehme M., Grützmacher D., Buca D., Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors, (2024) Nature Communications , 15 (1), art. no. 10502, DOI: 10.1038/s41467-024-54873-z

The study demonstrates a continuous-wave (CW), electrically pumped laser entirely based on group-IV materials, addressing the long-standing challenge in Si photonics.

The laser, built on a SiGeSn/GeSn multiple quantum well structure, achieves low threshold current (4 mA) and emits in the near-infrared at 2.32 µm.

By switching to pulsed mode, the micro-disk laser can operate at liquid nitrogen temperature, enabling reduced thermal load.