Hartmann J.M., Marion T., Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry, (2024) Materials Science in Semiconductor Processing, 169, art. no. 107893, DOI: 10.1016/j.mssp.2023.107893
Temperature is the dominant parameter influencing Sn incorporation in GeSn growth via RP-CVD, with Sn concentration decreasing by ~1.55% per 10 °C increase over the 301–362 °C range.
SnCl₄ flow impacts growth rate more than Sn concentration: A 3× increase in SnCl₄ flow only raised Sn content by ~2.6%, while growth rates increased linearly — low flows hinder thick-layer growth.
Optimal growth conditions balance Sn content and crystal quality: High-quality, cross-hatched layers were achieved up to 349 °C, whereas growth at 362 °C led to island formation, especially under low SnCl₄ flow.
