Publication on Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization

Coudurier N., Quintero A., Pellerin R., Robin M., Hartmann J.-M., Reboud V., Rodriguez P., Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization, (2025) IEEE Transactions on Electron Devices, 72 (4), pp. 2065 – 2072, DOI: 10.1109/TED.2025.3542347

Ohmic contacts with low resistivity were achieved on n-doped GeSn (6% Sn) using Ni, Ni₀.₉Pt₀.₁, and Ti, with resistivities as low as 10⁻⁵ Ω·cm².

Ti contacts demonstrated superior thermal stability, maintaining performance up to 400 °C, marking their first application on n-doped GeSn.

The study also revealed the impact of surface pre-cleaning on contact formation, which is crucial for optimizing device performance.